The diffusivity of copper in thin TiN layers was determined in specimens prepared by rf sputtering a 80nm copper layer onto a 200nm TiN layer on sapphire and silicon substrates. Specimens were heat-treated at 608, 635 and 700C under pressures lower than 2 x 10-6Pa. They were analyzed using Rutherford back-scattering spectroscopy and Auger sputter profiling. The diffusivity was described by:

D(cm2/s) = 9 x 107 exp[-427(kJ/mol)/RT]

from 608 to 700C.

M.B.Chamberlain: Thin Solid Films, 1982, 91[2], 155-62