The diffusivity of iron in TiN films was determined in samples prepared by reactive evaporation of Ti in a N2 atmosphere on silicon substrates followed by evaporation of pure iron. The iron diffusion profiles were investigated using 2MeV 4He+ Rutherford back-scattering spectroscopy after annealing at up to 600C. The diffusivity from 200 to 600C was described by:

D(m2/s) = 1.4 x 10-15 exp[-46/RT]

G.I.Grigorov, K.G.Grigorov, M.Stojanova, J.L.Vignes, J.P.Langeron, P.Denjean, L.Ranno: Physica C, 1995, 241[3-4], 397-400