The diffusion behavior of impurity cations was examined in deformed α-Al2O3 single crystals (sapphire) that had a high density of unidirectional basal dislocations. This behavior was examined in the temperature range of 1150–1400C by secondary ion mass spectrometry depth profiling techniques. The lattice and pipe diffusion kinetics were best described by:

D(m2/s) = 2.1 x 10-10exp[-3.1(eV)/kT]

and

a2D(m4/s) = (1.4 x 10-26 - 1.3 x 10-20)exp[-3.2(eV)/kT]

T.Nakagawa, A.Nakamura, I.Sakaguchi, N.Shibata, T.Mizoguchi, T.Yamamoto, H.Haneda, N.Ohashi, Y.Ikuhara: Acta Materialia, 2011, 59[3], 1105-11