The 18O tracer diffusion method was used to investigate O diffusion in reactively dc-sputtered IrO2 films. The profile measurements were performed using secondary ion mass spectrometry. For the investigation of O diffusivity in the samples, temperatures ranging from 600 to 765C were used. The O tracer diffusion in IrO2 films was found to be described by:

D (m2/s) = 2.8 x 10-6 exp[-2.73(eV)/kT]

It was shown that the extrinsic O diffusion was strongly influenced by the film preparation conditions.

C.U.Pinnow, I.Kasko, N.Nagel, T.Mikolajick, C.Dehm, F.Jahnel, M.Seibt, U.Geyer, K.Samwer: Journal of Applied Physics, 2002, 91[3], 1707-9