It was recalled that the diffusivity of B in this oxide could be enhanced by introducing H into the annealing atmosphere. The phenomenon was studied here by using a method in which B atoms, redistributed into the substrate, were monitored by using electrical methods. The B diffusivity in thermal oxide was measured at 950 to 1150C, under H partial pressures of up to 0.2atm. For a given pressure, the diffusion coefficient could be described by:

D (cm2/s) = 6 x 10-5 exp[-3.0(eV)/kT]

Y.Shacham-Diamand, W.G.Oldham: Journal of Electronic Materials, 1986, 15[4], 229-33