A study was made of B diffusion in thin samples. The B penetration was measured using secondary ion mass spectroscopy. The B diffusivity in pure SiO2 was described by:

D(cm2/s) = 3.96 x 10-2exp[-3.65(eV)/kT]

T.Aoyama, K.Suzuki, H.Tashiro, Y.Tada, T.Yamazaki, Y.Armoto, T.Ito:  Journal of the Electrochemical Society, 1993, 140[12], 3624-7