The diffusion of boron through silica films deposited onto n-type silicon by radio-frequency glow discharge was investigated. The results showed that the diffusion coefficient of boron at 1150C, obtained using rf discharge films was one to two orders of magnitude higher than that obtained using thermally grown oxide, and an order of magnitude higher than that obtained for sputtered oxides. The diffusion coefficient could be expressed as:

D(cm2/s) = 2.39 x 10-5 exp[-59000/RT]

at 1100 to 1200C.

S.P.Mukherjee, P.E.Evans: Thin Solid Films, 1972, 14[2], 299-303