The lattice diffusion of B implanted into cobalt disilicide was studied. The bulk substrate, prepared by solidification from a melt, had grain sizes in the mm range. The B was introduced by ion implantation. After heat treatment at 450 to 700C, the boron distribution was monitored using secondary ion mass spectrometry. The lattice diffusion was described by:

D(cm2/s) = 0.9 exp[-2.1(eV)/kT]

C.Zaring, P.Gas, B.G.Svensson, M.Östling, H.J.Whitlow: Thin Solid Films, 1990, 193-194[1], 244-7