The Cu diffusion was monitored for annealing temperatures of 650, 700, 750, 800 and 850C by successive removal of thin layers and resistivity measurements. The diffusivity increased from 2.84 x 10-8 to 3.22 x 10-7cm2/s with increasing annealing temperature. The temperature dependence of Cu diffusion was described by:

D(cm2/s) = 2.66 x 10-3exp[-1.09(eV)/kT]

M.Dogruer, Y.Zalaoglu, O.Gorur, O.Ozturk, G.Yildirim, A.Varilci, E.Yucel, C.Terzioglu: Journal of Materials Science - Materials in Electronics, 2013, 24[2], 776-83