The diffusion coefficient was observed to increase from 6.81 x 108 to 4.69 x 10-7 cm2/s as the diffusion annealing temperature increased. The temperature dependence of the Cu diffusion coefficient was described by:

D(cm2/s) = 3.75 x 10-3exp[-1.15(eV)/kT]

M.Dogruer, G.Yildirim, E.Yucel, C.Terzioglu: Journal of Materials Science - Materials in Electronics, 2012, 23[11], 1965-70