Diffusion in MoSi2 was investigated at 450 to 900C using secondary ion mass spectroscopy measurements. The dopant was mobile only for concentrations lower than about 4 x 1019 for As. These values were constant independently of the implanted dose and suggested the formation of metal-dopant compounds which controlled the concentration of dopant in solution. The mobile As could be described by:

D(cm2/s) = 3.2 x 10-6 exp[-1.4(eV)/kT]

S.Solmi, R.Angelucci, G.Cicognani, R.Canteri: Applied Surface Science, 1991, 53, 186-9