Boron diffusion in TaSi2 thin films was measured by using secondary ion mass spectrometry. Tantalum and silicon were deposited onto a (100) silicon wafer in a nominal ratio of 1:2 by co-sputtering followed by sintering at 950C for 3h. The diffusion anneals were performed at 579 to 795C. The temperature dependence of the lattice diffusion was given by:

D(cm2/s) = 6.31 x 10-11 exp[-1.09(eV)/kT]

R.Marmelstein, M.Sinder, J.Pelleg: Physica Status Solidi A, 1998, 168[1], 223-9