Based upon experimentally determined parabolic growth constants, silicon diffusion in the WSi2 and MoSi2 phases was determined:

D(cm2/s) = 4.96·x 10-2exp[-38000/RT]

H.A.Chatilyan, L.H.Arakelyan, S.L.Kharatyan: Defect and Diffusion Forum, 2005, 237-240[2], 867-72