The influence of various distributions of defects, in (5,5) single-walled carbon nanotubes, upon the electronic structure was studied. A method was suggested for connecting two perfect semi-infinite tubes having differing chiralities, such as four different (5,5)/(n,0) (n = 8, 9, 10) intramolecular junctions. Their electronic local density of states and quantum conductance were determined. It was found that the conductance gap of the metal/semiconductor heterojunction was determined not only by the electronic structure of the semiconductor tube, and that the defect distribution changed mainly the step behavior of conductance. This was particularly obvious in (5,5)/(9,0) metal/metal junctions.

Structural and Electronic Properties of Defect and Intramolecular Junctions for Single-Walled Carbon Nanotube. H.Liu, J.Chen, H.Yang: Physica Status Solidi B, 2004, 241[1], 127-33