An investigation was made of the effect of defects upon the electrical transport properties of metallic single-walled carbon nanotubes. The defects were introduced artificially by ion implantation and by deforming the single-walled carbon nanotube with the SiO2 film deposited upon it. Both defects were observed to act as gate-tunable electron scatters. With the dual gate structure, it was also shown that the scattering strength of the defect at a given back-gate voltage could be tuned by adjusting the top gate.

Effects of Artificial Defects on the Electrical Transport of Single-Walled Carbon Nanotubes. J.W.Park, J.Kim, J.O.Lee, K.C.Kang, J.J.Kim, K.H.Yoo: Applied Physics Letters, 2002, 80[1], 133-5