The fluence-dependent properties and annealing behavior of irradiation-induced deep levels in n-type samples of 6R-material were studied by using deep-level transient spectroscopy. Sample annealing revealed that the predominant signal at Ec-0.36eV consisted of 2 overlapping deep levels (ED3L, ED3H). The break-up temperature of ED3L was about 700C. The ED3H centre, together with another deep level at Ec - 0.44eV, could withstand annealing at up to 1600C. A revised value for the capture cross-section of the deep-level ED3H was measured after removing ED3L by annealing. A deep level which was found at Ec - 0.50eV was identified as being a vacancy-impurity complex; since it had a lower saturated concentration and weak thermal stability. Two other deep levels, Ec - 0.27eV and Ec - 0.32eV, were also reported.

Electron-Irradiation-Induced Deep Levels in n-Type 6H-SiC M.Gong, S.Fung, C.D.Beling, Z.You: Journal of Applied Physics, 1999, 85[11], 7604-8