Disorder-induced peak frequencies and intensities were considered, with particular emphasis placed on how the disorder-induced features evolved with increasing amounts of disorder. Two systems were analyzed: ion-bombarded graphene and nanographite, where disorder was represented by point defects and boundaries, respectively. Raman spectroscopy was used to study the atomic structure of the defect, making it possible to distinguish between zig-zag and armchair edges; based upon selection rules for phonon scattering. A different concept was discussed which involved the effect that defects had upon the lineshape of Raman-allowed peaks; due to local electron and phonon energy renormalization. Such effects could be observed using near-field optical measurements of the G′ feature for doped single-walled carbon nanotubes.

Defect Characterization in Graphene and Carbon Nanotubes using Raman Spectroscopy. M.S.Dresselhaus, A.Jorio, A.G.Souza Filho, R.Saito: Philosophical Transactions of the Royal Society A, 2010, 368[1932], 5355-77