Metallic single-wall carbon nanotube devices were characterized by using low-temperature transport measurements in order to study how the growth conditions affected defect formation in carbon nanotubes. Suspended carbon nanotube devices were grown in situ by using a molecular beam growth method on a pair of catalyst islands located on opposing Au electrodes fabricated by electron-beam lithography. Experimental evidence showed that defect formation in carbon nanotubes, in addition to the well-known growth temperature dependence, was also affected by the nature and composition of the carbon growth gases.

Control of Electron Transport Related Defects in in situ Fabricated Single Wall Carbon Nanotube Devices. Z.Zhou, R.Jin, G.Eres, A.Subedi, D.Mandrus: Applied Physics Letters, 2006, 89[13], 133124