Nanocrystalline homogeneous structures were produced via the isothermal crystallization of amorphous material. The effect of the microstructure upon local relaxation of H was investigated by making magnetic after-effect measurements at 4.2 to 480K. It was shown that the diffusion behavior, involving thermally activated H jumps between nearest-neighbor interstitial configurations within the various types of interface in crystalline material, was similar to that in the amorphous phase. A de-gassing process, monitored by using a manometric method, permitted a detailed correlation to be found between the annealing behavior of the H-induced relaxation spectra and the long-range H diffusion:

344K:     D (cm2/s) = 3.3 x 10-1 exp[-0.58(eV)/kT]

438K:     D (cm2/s) = 5.9 x 10-3 exp[-0.58(eV)/kT]

330K:     D (cm2/s) = 3.1 x 10-1 exp[-0.55(eV)/kT]

416K:     D (cm2/s) = 5.8 x 10-3 exp[-0.57(eV)/kT]

319K:     D (cm2/s) = 3.3 x 10-1 exp[-0.52(eV)/kT]

400K:     D (cm2/s) = 5.9 x 10-3 exp[-0.55(eV)/kT]

C.U.Maier, H.Kronmüller: Zeitschrift für Metallkunde, 1992, 83[12], 839-44