Residual defects in Al+- or B+-implanted 4H-type material were studied, as a function of annealing temperature and implantation temperature, by using cross-sectional transmission electron microscopy. No noticeable defect structure was observed before post-implantation annealing. After annealing, many black spots appeared in the implanted layer. These spots consisted of a dislocation loop that was parallel to the {00•1} of the 4H-type material, and a strained area at the upper and lower sides of the dislocation loop. The defect structure and its size did not depend upon the implantation temperature or type of implanted ion. The size of the defect area depended only upon the post-implantation annealing temperature. The size increased when the post-annealing temperature was increased.

Electron Microscopic Study of Residual Defects of Al+ or B+ Implanted 4H-SiC. T.Ohno, H.Onose, Y.Sugawara, K.Asano, T.Hayashi, T.Yatsuo: Journal of Electronic Materials, 1999, 28[3], 180-5