The status of understanding of diffusion in Ni3Al, Ni3Ge and Ni3Ga was reviewed. The six-jump cycle mechanism, vacancy pair mechanism, inter-sublattice mechanism, majority-atom sub-lattice mechanism and mixed inter/intra-sublattice mechanisms were considered in the light of available tracer diffusion data. Also presented were Monte Carlo results for the computer diffusion coefficients using available migration and defect formation energies for Ni3Al. It was shown that the overall data were consistent with the majority atom species diffusing largely on its own sub-lattice, with the minority atom species probably diffusing rapidly on the majority atom sub-lattice as antistructural atoms.

Diffusion in Nickel-Based Intermetallic Compounds Taking the L12 Structure. G.E.Murch, I.V.Belova: Journal of Materials Processing Technology, 2001, 118[1-3], 82-7. See also: Defect and Diffusion Forum, 2000, 177, 59-68