The distribution of secondary defects in B+ or Al+-implanted 4H-type material was studied by using transmission electron microscopy and secondary ion mass spectrometry. They were distributed from the projected range at low dosages, and from the near-surface at high dosages. They were distributed to a depth which corresponded to a concentration which was equal to about 10% of the maximum dopant concentration. The secondary defects were extrinsic dislocation loops, and their distribution was closely related to that of excess Si and C interstitials which were formed by implantation.

Secondary Defect Distribution in High Energy Ion Implanted 4H-SiC. T.Ohno, N.Kobayashi: Materials Science Forum, 2000, 338-342, 913-6