Reported profiles of 500C-implanted boron ions, diffused in 4H-material at 1200 to 1900C for 5 to 90min, were simulated using so-called dual sub-lattice modeling, in which a different diffusivity was assigned to diffusion via each sub-lattice. A semi-atomistic simulation assumed that silicon and carbon interstitials were the same interstitial (I) and that silicon and carbon vacancies were the same vacancy (V). Diffusion of implanted boron ions was calculated from the initial concentration profiles of I and V using Monte Carlo simulation, tentatively assuming a probability of 50% that implanted boron ions would occupy the carbon sub-lattice.

Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide. K.Mochizuki, H.Shimizu, N.Yokoyama: Japanese Journal of Applied Physics, 2009, 48[3], 031205