The diffusion length of Ga on the GaAs(001)-(2x4) β2 surface was investigated by using a Monte Carlo-based computational method. The method incorporated the chemical potential of Ga in the vapor phase and Ga migration potential on the reconstructed surface obtained by ab initio calculations. It was therefore possible to investigate the adsorption, diffusion and desorption kinetics of adsorbate atoms on the surface. The calculated results implied that the Ga diffusion length before desorption decreased exponentially with temperature because the Ga surface lifetime decreased exponentially. The Ga diffusion length L along [1¯10] and [110] on the GaAs(001)-(2 x 4)β2 surface was estimated to be L[110] ≅ 700nm and L[110] ≅ 200nm, respectively, at the incorporation-desorption transition temperature of about 860K.

Monte Carlo Simulation for Temperature Dependence of Ga Diffusion Length on GaAs(001). Y.Kangawa, T.Ito, A.Taguchi, K.Shiraishi, T.Irisawa, T.Ohachi: Applied Surface Science, 2002, 190[1-4], 517-20