The activation barrier height, directional hopping-rate ratio and directional sticking-probability ratio over a range of sample temperatures and As4 fluxes were measured using a combination of Monte Carlo simulations and in situ molecular beam epitaxy-scanning tunneling microscopy experiments. The Ga atoms on the GaAs(001)-(2x4) reconstructed surface exhibited a higher diffusion rate under a higher As4 pressure. The activation barrier of approximately 1eV was in good agreement with first-principles theoretical predictions.

Monte Carlo Derived Diffusion Parameters for Ga on the GaAs(001)-(2x4) Surface: a Molecular Beam Epitaxy-Scanning Tunneling Microscopy Study. V.P.LaBella, D.W.Bullock, Z.Ding, C.Emery, W.G.Harter, P.M.Thibado: Journal of Vacuum Science and Technology A, 2000, 18, 1526