An atomistic analysis was made of transient enhanced diffusion and defect evolution. The ripening and dissolution of small Si interstitial clusters and {113} defects, and their influence upon the transient enhanced diffusion of dopants in silicon were analyzed by using kinetic Monte Carlo simulations. It was shown that defect dissolution during post-implantation annealing was controlled by the annihilation of Si interstitials at the surface.

Atomistic Analysis of Defect Evolution and Transient Enhanced Diffusion in Silicon. M.Aboy, L.Pelaz, L.A.Marqués, L.Enriquez, J.Barbolla: Journal of Applied Physics, 2003, 94[2], 1013-8