It had been reported that arsenic diffusion could be enhanced or retarded by surrounding interstitial-rich and vacancy-rich environments created by Si point defect implants. The enhancement and retardation could be attributed to the predominant arsenic interstitial diffusion mechanism during post-implantation annealing. Kinetic Monte Carlo simulations revealed a good match with experiment.

An Experimental and Simulation Study of Arsenic Diffusion Behavior in Point Defect Engineered Silicon. N.Kong, T.A.Kirichenko, G.S.Hwang, F.C.Mark, S.G.H.Anderson, S.K.Banerjee: Materials Research Society Symposium Proceedings, 2007, 994, 307-13