Theoretical investigations were made of the suppression of boron diffusion in a silicon substrate following pre-amorphization implantation. Numerical studies were made of the defect-generating behavior of silicon atoms and their subsequent effect upon the transient enhanced diffusion of boron as a new species for pre-amorphization implantation. The kinetic Monte Carlo simulation revealed that Si pre-amorphization implantation produced more interstitials than in the case of Ge pre-amorphization implantation, while Ge pre-amorphization implantation made interstitials move further toward the surface than did Si pre-amorphization implantation during annealing; resulting in the suppression of boron transient enhanced diffusion.

Kinetic Monte Carlo Study on Transient Enhanced Diffusion: Posterior to Amorphization Process. S.Y.Park, Y.K.Kim, T.Won: Molecular Simulation, 2009, 35[6], 525-9. See also: Journal of the Korean Physical Society, 2008, 53[5-1], 2616-20 and Journal of Computational Electronics, 2008, 7[3], 419-22