A kinetic Monte Carlo study was made of the diffusion behavior of boron in silicon crystals; especially the transient enhanced diffusion of boron in silicon during implantation and annealing. The accuracy of kinetic Monte Carlo code was verified by investigating the evolutionary behavior of interstitials and vacancies when a silicon substrate was implanted with silicon having an energy of 10keV to a dose of 1014/cm2. To investigate the influence of native defects on boron diffusion, single and multi-boron markers grown by MBE were used. The simulation results revealed that the precursor of boron clusters (BI2) was predominant in the initial stage of annealing; which explained the boron transient enhanced diffusion phenomenon in terms of the concentration of boron complexes and interstitial and vacancy clusters, respectively. The formation of {311} defects and dislocation loops was deduced from the time-evolutionary study.

Kinetic Monte Carlo (KMC) Simulations for Boron Diffusion in Ion-Implanted Crystalline Materials. J.Seo, O.Kwon, K.Kim, T.Won: Journal of the Korean Physical Society, 2004, 45[5], 1244-8