Kinetic Monte Carlo simulations were made of the effect of annealing time and ramp rate on boron transient enhanced diffusion in low-energy ion-implanted silicon. The simulations used a database of defect and dopant energetics derived from first-principles calculations. The complete atomistic details of defect and dopant clustering during annealing, and the dependence of boron transient enhanced diffusion upon ramp rate were analyzed. The simulations provided a complete time history of the evolution of the active boron fraction during annealing for a wide variety of conditions. Also studied was lateral spreading of the boron during annealing under two different conditions: furnace annealing and ramp annealing.

Effect of Ramp Rate and Annealing Temperature on Boron Transient Diffusion in Implanted Silicon: Kinetic Monte Carlo Simulations. M.J.Caturla, M.Foad, T.Diaz de la Rubia: Proceedings of the International Conference on Ion Implantation Technology, 1999, 2, 1018-21