The retardation of boron diffusion in a germanium pre-amorphized silicon substrate was studied using the kinetic Monte Carlo approach. In order to investigate the retardation mechanism, the temporal behavior of self-interstitials as well as the evolution of various kinds of boron clusters was calculated using a fine time-scale kinetic Monte Carlo method. The latter study revealed that both interstitials and vacancies in the germanium pre-amorphized area disappeared very rapidly, followed by retardation of boron diffusion due to the presence of excessive interstitials in the end of range. It was observed that more boron clusters were produced in Ge pre-amorphized silicon than in silicon with no pre-amorphization. This seemed to be due to interstitials arriving from the end-of-range band generated by the germanium implant.

Atomistic Modeling for Boron Diffusion Profile in Silicon Posterior to Germanium Pre-Amorphization. J.S.Kim, T.Won: Microelectronic Engineering, 2007, 84[5-8], 1556-61