Atomistic kinetic Monte Carlo simulations were used to illustrate the correlation between Si interstitial defects generated by ion implantation, and B diffusion and activation in Si. The amount of residual damage was not greatly affected by moderate dynamic annealing during sub-amorphizing implantation. Dynamic annealing, even at room temperature, significantly affected the residual damage due to amorphizing implantation. The efficiency of the surface as a sink for point defects affected the evolution of Si interstitial defects. They set up the Si interstitial supersaturation that was responsible for transient enhanced diffusion of B and also controlled the formation and dissolution of B-Si interstitial clusters.

Atomistic Modeling of Dopant Implantation, Diffusion, and Activation. L.Pelaz, M.Aboy, P.Lopez, L.A.Marques: Journal of Vacuum Science and Technology B, 2006, 24[5], 2432-6