A comprehensive model for B implantation, diffusion and clustering was presented. The model, implemented in a Monte Carlo atomistic simulator, successfully explained and predicted the behavior of B under a wide variety of implantation and annealing conditions by positing the formation of immobile precursors of B clusters, prior to the onset of transient enhanced diffusion. The model also included the usual mechanisms of Si self-interstitial diffusion and B kick-out. The immobile B cluster precursors, such as BI2 (a B atom with two Si self-interstitials) formed during implantation, or in the very early stages of annealing, when the Si interstitial supersaturation was very high. They then acted as nucleation centers for the formation of B-rich clusters during annealing.

B Diffusion and Clustering in Ion Implanted Si: the Role of B Cluster Precursors. L.Pelaz, M.Jaraiz, G.H.Gilmer, H.J.Gossmann, C.S.Rafferty, D.J.Eaglesham, J.M.Poate: Applied Physics Letters, 1997, 70[17], 2285-7