Kinetic Monte Carlo studies were made of the effect of C co-implants on the pre-amorphization implantation process. The binary collision approximation approach was used for the acquisition of the initial as-implanted dopant profile and the kinetic Monte Carlo method was used for the simulation of diffusion during annealing. The simulation results implied that C co-implants significantly suppressed B diffusion, due to recombination with interstitials. The B diffusion profile could also be compared with C by kinetic Monte Carlo calculations of the C reaction with interstitials. It was found that B diffusion was appreciably affected by the energy level of the C co-implant, due to enhancement of the trapping of interstitials by B atoms.

Kinetic Monte Carlo Study on Boron Diffusion with Carbon Pre-Implant Posterior to Amorphization Process. S.Y.Park, K.S.Sung, T.Y.Won: AIP Conference Proceedings, 2011, 1399, 77-8. See also: Journal of Nanoscience and Nanotechnology, 2011, 11[7], 6594-8 and Journal of Nanoscience and Nanotechnology, 2010, 10[5], 3600-3 and Journal of Computational and Theoretical Nanoscience, 2009, 6[11], 2423-6 and Journal of the Korean Physical Society, 2009, 55[1], 331-5