A theoretical investigation was made of the suppression of B diffusion in a Si substrate, following pre-amorphization implantation, in order to understand the mechanism of formation of a shallow and abrupt junction. The defect-generating characteristics of Si atoms as a new species for pre-amorphization implantation were investigated numerically. The kinetic Monte Carlo simulation revealed that Si pre-amorphization implantation produced more interstitials than did Ge pre-amorphization implantation, whereas the latter made interstitials move closer to the surface than did the former case during annealing. This resulted in the suppression of the B transient enhanced diffusion.

Kinetic Monte Carlo Study on Boron Diffusion Posterior to Pre-Amorphization Implant Process. S.Y.Park, Y.K.Kim, T.Won: Microelectronic Engineering, 2009, 86[3], 430-3