Atomistic modeling and simulation studies were made of B diffusion during rapid thermal annealing at 1000 and 1050C following B implantation. The implantation energy varied from 0.5 to 13keV. Atomistic calculations made it possible to predict the depth profiles of ultra-shallow junctions during rapid thermal annealing. To obtain information on the location of defects and dopants, the binary collision approximation ion implantation approach was used. Kinetic Monte Carlo diffusion simulation was applied to ion-implantation cascades. The relationship between interstitials, vacancies, clusters and transient enhanced diffusion was investigated in order to understand the mechanism of transient enhanced diffusion, which was important to the formation of ultra-shallow junctions. Boron-enhanced diffusion, which occurred during ultra-low energy implantation, was also investigated.

Atomistic Modeling and Simulation of Boron Diffusion in Crystalline Materials: KMC. J.Seo, O.Kwon, K.Kim, T.Won, M.Jaraiz, I.Martin-Bragado: Journal of the Korean Physical Society, 2004, 45, S779-82