It was recalled that carbon often appeared in Si at concentrations above its solubility. A comprehensive model was proposed which, upon taking diffusion and clustering into account, could reproduce various experimental results. Simulations were performed by incorporating this model into a Monte Carlo simulator. The initial path for clustering was consistent with experimental observations regarding the formation and dissolution of substitutional C-interstitial C pairs (Cs-Ci). Carbon diffusion profiles at 850 and 900C in carbon-doping superlattice structures were well reproduced. Under conditions of thermal generation of intrinsic point defects, the weak temperature dependence of the Si interstitial undersaturation and the vacancy supersaturation in carbon-rich regions also agreed with experimental measurements.

Carbon in Silicon: Modeling of Diffusion and Clustering Mechanisms. R.Pinacho, P.Castrillo, M.Jaraiz, I.Martin-Bragado, J.Barbolla, H.J.Gossmann, G.H.Gilmer, J.L.Benton: Journal of Applied Physics, 2002, 92[3], 1582-7