The end-of-range defects and transient enhanced diffusion of indium in silicon were analyzed. A kinetic Monte Carlo simulation technique was used for atomistic modeling of indium diffusion. The kinetic Monte Carlo simulation revealed small defects in the initial stage of annealing for amorphous implant dose. The results showed that the interstitial clusters, defects and loops influenced indium diffusion above the amorphous implant dose.

Modeling of Indium Diffusion and End-Of-Range Defects in Silicon using a Kinetic Monte Carlo Simulation. T.Noda: Journal of Applied Physics, 2003, 94[10], 6396-400