Transient enhanced diffusion of indium implanted into silicon was studied in the presence of an end-of-range damage layer. In order to investigate the effect of end-of-range defects upon indium diffusion, samples were implanted (1013 to 5 x 1014/cm2) with indium to doses sufficient to produce an amorphous layer. Transmission electron microscopy and Rutherford back-scattering spectrometry revealed that the amorphization threshold of indium implantation was about 5 x 1013/cm2 for 200keV 115In+ implanted using a 100μA/cm2 beam current density at room temperature. These results were consistent with Monte Carlo simulations of implantation. Monte Carlo simulations indicated a deviation from the plus-one model due to the mass effect of indium. After amorphization, following both rapid thermal annealing at 1000C and furnace annealing at 650 or 850C in nitrogen, the results revealed the formation of extrinsic end-of-range dislocation loops below the original amorphous/crystalline interface. During this process, strong segregation of indium toward the end-of-range dislocation loops was clearly observed. The profile shift of indium at a concentration of 1017/cm3 was not proportional to the implanted dose. Since most interstitials condensed into end-of-range dislocation loops, the diffusivity enhancement of indium was not proportional to the implant dose above the amorphization threshold. Effects of End-of-Range Dislocation Loops on Transient Enhanced Diffusion of Indium Implanted in Silicon. T.Noda, S.Odanaka, H.Umimoto: Journal of Applied Physics, 2000, 88[9], 4980-4