The effect of carbon on self-interstitial diffusion in Si was studied by means of kinetic Monte Carlo simulation. It was found that modest levels of carbon (≳1017/cm3) significantly reduced the effective interstitial diffusivity. By fitting self-interstitial profiles, migration energies and pre-factors for effective diffusivity were determined for a variety of background carbon levels. A re-examination was made of experiments performed on samples having significant levels of carbon, and which attempted to measure the effective diffusivity by monitoring the spreading of boron marker layers. It was shown that the presence of boron in delta-doped markers significantly altered the measured self-interstitial diffusivity.

A Kinetic Monte-Carlo Study of the Effective Diffusivity of the Silicon Self-Interstitial in the Presence of Carbon and Boron. M.D.Johnson, M.J.Caturla, T.Díaz De La Rubia: Journal of Applied Physics, 1998, 84[4], 1963-7