The effects of a buried germanium island, within a silicon substrate, upon silicon adatom diffusion on the substrate surface were studied using kinetic Monte Carlo simulations. The confinement of adatoms caused by the strain field of the germanium island could be clearly seen. Due to an anisotropy of adatom diffusion, the confinement in directions parallel and perpendicular to the dimer rows of the surface took place at different temperatures.

Adatom Diffusion on Strained Si(001)-(2x1l) Surface. A.Kuronen, K.Henriksson, K.Kaski: Materials Research Society Symposium – Proceedings, 2002, 749, 221-6