The migration of Si atoms on Si(100) was studied by analyzing the islands formed during deposition using a Monte Carlo method and by comparing simulations with experiments performed at 350 to 500K. The temperature dependence of the experimental island number density was reproduced using a minimum number of assumptions. The model also reproduced very well many phenomena which were experimentally observed, such as the preferred formation of chains having an odd number of dimers, the preferentially ending of dimer chains over the dimer rows of the substrate and the formation of different domains.

Model for Diffusion and Growth of Silicon on Si(100) with Inequivalent Sites in a Square Lattice. J.L.Iguain, H.O.Mártin, C.M.Aldao: Physical Review B, 1996, 54[12], 8751-5