Sub-millisecond non-melt laser annealing was investigated through experiments and atomistic kinetic Monte Carlo modeling. Non-melt laser annealing could improve the dopant activation dramatically and achieve shallow junctions. B diffusivity during sub-ms annealing was discussed for the first time. A kinetic Monte Carlo model with FnVm complexes indicated that the thermal budget of sub-ms annealing was too small for full defect evolution and one possible solution for defect stabilization was F co-implant.

Analysis of Dopant Diffusion and Defect Evolution during Sub-Millisecond Non-Melt Laser Annealing Based on an Atomistic Kinetic Monte Carlo Approach. T.Noda, W.Vandervorst, S.Felch, V.Parihar, C.Vrancken, S.Severi, A.Falepin, T.Janssens, H.Bender, B.Van Daele, P.Eyben, M.Niwa, R.Schreutelkamp, F.Nouri, P.P.Absil, M.Jurczak, K.De Meyer, S.Biesemans: Technical Digest - International Electron Devices Meeting, IEDM, 2006, 4154208