The de-channeling cross-sections of axially channeled MeV H and He ions at dislocations in nickel crystals were studied. The de-channelling cross-section obtained was proportional to the square root of the ion energy. The width of the dissociated dislocation was determined by a comparison of the experimental cross-sections with the results of numerical calculations of the de-channelling cross-section at the dissociated dislocation. Experimental results for nickel suggested that dislocations in nickel did not dissociate and that the upper limit of the width of dissociation was about 2nm. The stacking-fault energy calculated from these widths was 80mJ/m2.

Determination of Stacking Fault Energies in Silicon and Nickel Single Crystals by Channelling Technique. K.Kimura: Journal of the Physical Society of Japan, 1983, 52[3], 895-904