Samples of 6H-type material were implanted with He+, to various fluences, and were annealed at temperatures between 700 and 1700C in order to generate intrinsic-related defect centres. Deep level transient spectroscopic and low temperature photoluminescence investigations were carried out on identical samples. The correlation of corresponding peak-heights (defect concentrations) in deep level transient spectroscopic and low-temperature photoluminescence spectra, as a function of the implanted He+ fluence and annealing temperature, led to the conclusion that the E1/E2-centre which was observed in deep level transient spectroscopy and the D1 defect which was observed in low-temperature photoluminescence spectra were caused by the same defect centre. A corresponding identity was established between the Z1/Z2-centre and the defect which was responsible for a photoluminescence line at 434.9nm.

Correlation between DLTS and Photoluminescence in He-Implanted 6H-SiC. T.Frank, G.Pensl, S.Bai, R.P.Devaty, W.J.Choyke: Materials Science Forum, 2000, 338-342, 753-6