The dissociation widths of extended dislocations were measured using the weak-beam technique of electron microscopy, for α and β dislocations separately. The value of the stacking-fault energy was deduced to be 8.7mJ/m2. The experimental results agreed with the modified ionic charge model of dislocations in II–VI semiconductors, and not with the pure ionic model.

Partial Separations of Extended α and β Dislocations in II–VI Semiconductors. G.Lu, D.J.H.Cockayne: Philosophical Magazine A,1986, 53[3], 307-20