Single crystals were compressed in the <11¯1> direction during creep experiments, and dynamic recovery was investigated within the regime of steady-state creep. It was controlled by cross-slip at higher temperatures (>820K) and by climb at lower temperatures (<820K). The corresponding activation energies were 5.1eV for cross slip and 3.7eV for climb (self-diffusion). The former energy led to a stacking-fault energy of 52mJ/m2.

High Temperature Creep and Transmission Electron Microscopy of GaAs. R.Behrensmeier, H.G.Brion, H.Siethoff, P.Veyssière, P.Haasen: Materials Science and Engineering A, 1991, 137, 173-6. See also: Physica Status Solidi A, 1991, 124[2], 447-53