Electron microscopic observations were made of α and β dislocations. Using the weak-beam technique, the dislocations were found to be dissociated, the separation of the partials being the same for α and β dislocations. The intrinsic stacking-fault energy was deduced to be 48mJ/m2.

The Dissociation of Dislocations in GaAs. A.M.Gómez. P.B.Hirsch: Philosophical Magazine A, 1978, 38[6], 733-7