Misfit dislocations in epitaxially grown layers of GaAs1-xPx having a lattice-constant gradient were examined using weak-beam transmission electron microscopy. They were dissociated into partial dislocations and, in specimens with (113) growth planes, they formed networks of extended and contracted nodes on (111) planes. The dissociation corresponded to an intrinsic stacking-fault energy of 43mJ/m2 for GaAs0.7P0.3.

Extended Dislocations in GaAs0.7P0.3. S.Mader, A.E.Blakeslee: Applied Physics Letters, 1974, 25[7], 365-7