Using weak-beam electron microscopy, the stacking-fault energies of III-V compounds were determined by measuring the dissociation width of edge dislocations. The stacking-fault energy of GaSb was 53mJ/m2. There was a strong correlation between the stacking-fault energy and the ionicity of the bond. The plasticity of the compound was traced to the dislocation velocity.

Stacking Fault Energy and Ionicity of Cubic III–V Compounds. H.Gottschalk, G.Patzer, H.Alexander: Physica Status Solidi A, 1978, 45[1], 207–17